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Low Dielectric Constant Materials for IC Applications

Specificaties
Gebonden, 310 blz. | Engels
Springer Berlin Heidelberg | 2003e druk, 2002
ISBN13: 9783540678199
Rubricering
Springer Berlin Heidelberg 2003e druk, 2002 9783540678199
€ 180,99
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Samenvatting

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for

Specificaties

ISBN13:9783540678199
Taal:Engels
Bindwijze:gebonden
Aantal pagina's:310
Uitgever:Springer Berlin Heidelberg
Druk:2003

Inhoudsopgave

1 Overview on Low Dielectric Constant Materials for IC Applications.- 1.1 Introduction.- 1.2 Dielectric Constant and Bonding Characteristics.- 1.3 Material Properties and Integration Requirements.- 1.4 Characterization of Low-? Dielectrics.- 1.5 Porous Low-? Materials.- 1.6 Conclusion.- References.- 2 Materials Issues and Characterization of Low-? Dielectric Materials.- 2.1 Introduction.- 2.2 Thin-Film Material Characterization.- 2.3 General Structure-Property Relationships.- 2.4 Fluorinated Polyimide: Effect of Chemical-Structure Modifications on Film Properties.- 2.5 Crosslinked and Thermosetting Materials.- 2.6 Parylene Polymers: Effect of Thermal History on Film Properties.- 2.7 Future Challenges.- References.- 3 Structure and Property Characterization of Low-? Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron Scattering.- 3.1 Introduction.- 3.2 Two-Phase Methodology.- 3.3 Three-Phase Methodology.- 3.4 Films with Ordered Porous Structure.- 3.5 Limits of SANS Characterization Methods.- 3.6 Future Developments.- 3.7 Conclusion.- References.- 4 Vapor Deposition of Low-? Polymeric Dielectrics.- 4.1 Introduction.- 4.2 Vapor-Phase Deposition and Polymerization on Substrates.- 4.3 Parylenes.- 4.4 Polynaphthalene and Its Derivatives.- 4.5 Teflon and Its Derivatives.- 4.6 Vapor-Deposited Polyimides.- 4.7 Prospects for Vapor-Depositable Low-? Polymers.- References.- 5 Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-? Materials.- 5.1 Introduction.- 5.2 FSG Films.- 5.3 a-C:F Films.- References.- 6 Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity.- 6.1 Introduction.- 6.2 Porous Silica.- 6.3 Organosilicates.- 6.4 Porogens.- 6.5 Porous OrganosilicateMatrix Resins.- 6.6 Formation of Nanohybrids.- 6.7 Porous Organosilicates.- 6.8 Characterization of Porous Organosilicates.- 6.9 Conclusion.- References.- 7 Metal/Polymer Interfacial Interactions.- 7.1 Introduction.- 7.2 Experimental Methods.- 7.3 Metallization of Fluoropolymers.- 7.4 Polymers on Metals: Adhesion to Cu.- 7.5 Conclusion.- References.- 8 Diffusion of Metals in Polymers and During Metal/Polymer Interface Formation.- 8.1 Introduction.- 8.2 Thermodynamic Considerations.- 8.3 Effect of Metal-Polymer Interaction on the Mobility of Metal Atoms.- 8.4 Surface Diffusion, Nucleation, and Growth of Metal Films.- 8.5 Diffusion and Aggregation.- 8.6 Atomic Diffusion.- 8.7 Conclusion.- References.- 9 Plasma Etching of Low Dielectric Constant Materials.- 9.1 Introduction.- 9.2 Technological Requirements and Patterning Approaches.- 9.3 Fluorocarbon-Based Etching Processes.- 9.4 Directional Etching of Organic Low-? Materials.- 9.5 Postetch Mask-Stripping and Via-Cleaning Processes.- 9.6 Conclusion.- References.- 10 Integration of SiLK Semiconductor Dielectric.- 10.1 Introduction.- 10.2 SiLK Semiconductor Dielectric.- 10.3 Subtractive Technologies.- 10.4 Damascene Technologies.- 10.5 Cost-of-Ownership.- 10.6 Conclusion.- References.
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        Low Dielectric Constant Materials for IC Applications